band switching diodes BA682, ba683 vishay semiconductors document number: 85530 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.6, 16-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 mechanical data case: minimelf sod-80 weight: approx. 31 mg cathode band color: black packaging codes/options: gs18/10k per 13" reel (8 mm tape), 10k/box gs08/2.5k per 7" reel (8 mm tape), 12.5k/box features ? silicon planar diodes ? low dynamic forward resistance ? low diode capacitance ? high reverse impedance ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? band switching in vhf-tuners note (1) t amb = 25 c, unless otherwise specified note (1) t amb = 25 c, unless otherwise specified note (1) t amb = 25 c, unless otherwise specified 94 9371 parts table part type differentiation ordering code remarks BA682 v r = 35 v, r f at i f 3 ma = max. 0.7 BA682-gs18 or BA682-gs08 tape and reel ba683 v r = 35 v, r f at i f 3 ma = max. 1.2 ba683-gs18 or ba683-gs08 tape and reel absolute maximum ratings (1) parameter test conditions symbol value unit reverse voltage v r 35 v forward continuous current i f 100 ma thermal characteristics (1) parameter test condition symbol value unit junction to ambient air on pc board 50 mm x 50 mm x 1.6 mm r thja 500 k/w junction temperature t j 150 c storage temperature range t stg - 55 to + 150 c electrical characteristics (1) parameter test condition part symbol min. typ. max. unit forward voltage i f = 100 ma v f 1000 mv reverse current v r = 20 v i r 50 na diode capacitance f = 100 mhz, v r = 1 v c d1 1.5 pf f = 100 mhz, v r = 3 v BA682 c d2 1.25 pf ba683 c d2 1.2 pf dynamic forward resistance f = 200 mhz, i f = 3 ma BA682 r f1 0.7 ba683 r f1 1.2 f = 200 mhz, i f = 10 ma BA682 r f2 0.5 ba683 r f2 0.9
BA682, ba683 vishay semiconductors band switching diodes document number: 85530 for technical questions within your region, please contact one of the following: www.vishay.com rev. 1.6, 16-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 2 typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - dynamic forward resistance vs. forward cu rrent fig. 2 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): minimelf sod-80 0.1 1 10 0.1 1 10 100 100 94 9074 r f - differential for w ard resistance ( ) i f - for w ard c u rrent (ma) ba6 8 3 ba6 8 2 f = 200 mhz t j = 25 c 0.1 0 0.5 1.0 1.5 2.0 3.0 c d - diode capacitance (pf) 100 10 94 9075 2.5 v r - re v erse v oltage ( v ) 1 ba6 8 2 ba6 8 3 f = 200 mhz t j = 25 c cathode indification 0.47 (0.019) max. 2.5 (0.09 8 ) max. 1.25 (0.49) min. 3.7 (0.146) 3.3 (0.130) 5 (0.197) ref. 2 (0.079) min. 1.6 (0.063) 1.4 (0.055) foot print recommendation: * * the gap b et w een pl u g and glass can b e either on cathode or anode side doc u ment no.:6.560-5005.01-4 re v . 8 - date: 07.j u ne.2006 96 12070
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